Originally posted by Harvey
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) This is why I suggest floating the inductive ringing above that level to prevent the damping if you are using it to heat the inductor, or feed a bridge charger take off node. For example, if your Peak to Peak ringing voltage is 100V, then put your supply at 60V to keep the bottom peak above ground. The IRFPG50 can easily support ringing of 990V, so a 510V supply would work fine for that and all of the energy would be returned to the inductor. This way the MOSFET stays cool, the Body Diode does not have to conduct in either direction and all of the energy stays with the inductor to be dissipated or taken off for charging.
I²R tells us the power in FET, where it is 2 Ohms ON, to be 74.42W if the current were continuous DC. So it would get pretty warm even during normal operation. Devices with lower on resistance, or parallel MOSFET's can greatly reduce that dissipation loss.











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